AlGaN/GaN HFET Device Results

K ] / AlGaN/GaN HFET Device Results%CAlGaN/GaN HFET Device Results

Below is a table summarizing the AlGaN/GaN HFET device results in chronological5order. The latest results are at the top of the list.

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Table I: AlGaN/GaN HFET Device Results
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Gate Length L_sd f_T f_max I_sd RF Power gm_ext Reference
micron micron GHz GHz A/mm W/mm at GHz mS/mm
0.15 65 80 1.300 1.8 at 4 300 Unpublished
3 5 0.800 140 Kuksenkov0798
0.45 28 114 0.680 6.8 at 10 200 Sheppard0698
0.7 2 15 42 1.100 2.82 at 10 270 Sullivan06981and Sullivan0498
0.4 26 51 0.850 Nguyen0498
1.4 3.6 0.475 220 Kawai0398
0.15 67 140 0.700 1.55 at 3 230 Chu0298
0.25 2 28 40 0.750 120 Nguyen0298
0.25 2 53 58 1.430 229 Ping0298
0.5 2 33 41 1.400 221 Ping0298
1 3 15 24 1.220 205 Ping0298
0.7 2 17.5 44 1.050 2.84 at 8
2.57 at 10
220 Wu0298
0.9 2 15 35 1.000 255 Wu0298
0.25 2 45 1.020 1.71 at 8.4 220 Chen0298
1.5 5 0.950 142 Gaska1097
0.25 1.6 52 82 1.130 3.3 at 18 240 Wu0997a
0.2 1.6 50 92 0.806 1.7 at 10 240 Wu0997b
0.12 46.9 103 0.550 120 Eastman0897
0.25 2-3 1.710 222 Chen0797
0.25 2 1.000 130 Gaska0797
4 6 1.000 130 Gaska0797
2 6 11 0.260 1.5 at 4 105 Aktas0697
0.25 2 37 81 1.000 152 Ping0697
0.5 2 21 53 0.880 Ping0697
0.7 2 14 44 0.850 Ping0697
1.0 3 11 31 0.740 122 Ping0697
1 3 9.6 27.2 0.700 1.57 at 4 160 Wu0697
1.5 3 1.100 270 Fan0497
0.12 46.9 103 0.560 80 Burm0497
0.25 2 37.5 80.4 1.020 220 Chen0397
0.25 2 27 80 0.420 120 Nguyen0297
1 5 6 11 0.200 70 Binari0197
1.5 4 0.275 142 Aktas1296
0.15 2 29.8 97.4 0.600 0.27 at 10 120 Khan1296
1 4 6 15 0.340 120 Wu0996a
1.5 >2.5 0.695 222 Mohammad0996
1.5 3 0.330 130 Wu0996b
1 3 0.310 140 Wu0996b
2 4 0.490 186 Fan0896
1 5 0.350 120 Chen0896
1 5 18.3 0.600 110 Khan0796
0.25 >1 21.4 77.5 0.150 40 Burm0596
0.25 2 36.1 70.8 0.200 90 Khan0296
1 5 0.333 23 Khan0196
3 5 0.300 120 Ozgur0895
0.23 1.75 22 70 0.050 24 Khan0295
0.25 1.75 11 35 0.060 27 Khan0894
4 10 0.500 28 Khan0893
' C

ReferencesJ

[Kuksenkov0798] D. V. Kuksenkov, H. Temkin,MR. Gaska, and J. W. Yang, "Low-Temperature Niose in AlGaN/GaN HeterostructureFField Effect Transistors," IEEE Electron Device Lett., vol. 19,no. 7, pp. 222-224, July 1998.K

[Sheppard0698] S. T. Sheppard, K. Doverspike,KW. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins,L"High Power GaN/AlGaN HEMTs on Silicon Carbide", in abstracts of 1998 Device0Research Conference, Charlottesville, VA (1998).H

[Sullivan0698] G. J. Sullivan, M. Y. Chen,GJ. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott,G"High-Power 10-GHz Operation of AlGaN HET's on Insulating SiC," IEEEBElectron Device Lett., vol. 19, no. 6, pp. 198-200, June 1998.K

[Sullivan0498] G. J. Sullivan, J. A. Higgins,JM. Y. Chen, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott, "HighIpower RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbideFsubstrates," Electronics Lett., vol. 34, no. 9, pp. 922-924, 30April 1998.H

[Nguyen0498] N. X. Nguyen, C. Nguyen, and D.OE. Grider, "Device characteristics of scaled GaN/AlGaN MODFETs," Electronics6Lett., vol. 34, no. 8, pp. 811-812, 16 April 1998.F

[Kawai0398] H. Kawai, M. Hara, F. Nakamura,Hand S. Imanaga, "AlN/GaN insulated gate heterostructure FET with regrownMn+ GaN ohmic contact," Electronics Lett., vol. 34, no. 6, pp. 592-593,19 March 1998.H

[Gaska0398] R. Gaska, A. Osinsky, J. W. Yang,Fand M. S. Shur, "Self-Heating in High-Power AlGaN-GaN HFET's," IEEE@Electron Device Lett., vol.19, no. 3, pp. 89-91, March 1998.G

[Chu0298] K. Chu et. al., WOCSEMMAD, Monterey,CA, February 1998.H

[Nguyen0298] C. Nguyen, N. X. Nguyen, M. Le,Jand D. E. Grider, "High performance GaN/AlGaN MODFETs grown by RF-assistedIMBE," Electron. Lett., vol. 34, no. 3, pp. 309-310, February 1998.H

[Ping0298] A. T. Ping, Q. Chen, J. W. Yang, M.HAsif Khan, and I. Adesida, "DC and Microwave Performance of High-CurrentFAlGaN/GaN Heterostructure Field Effect Transistors Grown on p-Type SiCJSubstrates," IEEE Electron Device Lett., vol. 19, no. 2, pp. 54-56,February 1998.L

[Wu0298] Y.-F. Wu, B. P. Keller, P. Fini, S. Keller,OT. J. Jenkins, L. T. Kehias, S. P. Denbaars, and U. K. Mishra, "High Al-ContentFAlGaN/GaN MODFET's for Ultrahigh Performance," IEEE Electron Device2Lett., vol. 19, no.2, pp.50-53, February 1998.F

[Chen0298] Q. Chen, J. W. Yang, R. Gaska, M.HAsif Khan, Michael S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgins,TA. T. Ping, and I. Adesida, "High-Power Microwave 0.25-mmFGate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistor,"FIEEE Electron Device Lett., vol. 19, no. 2, pp. 44-46, February1998.H

[Yu1197] E. T. Yu, G. J. Sullivan, P. M. Asbeck,MC. D. Wang, D. Qiao, and S. S. Lau, "Measurement of piezoelectrically inducedKcharge in GaN/AlGaN heterojucture field-effect transistors," Appl. Phys.<Lett., vol. 71, no. 19, pp. 2794-2796, 10 November 1997.N

[Gaska1097] R. Gaska, Q. Chen, J. Yang, A. Osinsky,HM. Asif Khan, and M. S. Shur, "High-Temperature Performance of AlGaN/GaNFHFET's on SiC Substrates," IEEE Electron Device Lett., vol. 18,"no. 10, pp. 492-494, October 1997.F

[Wu0997a] Y.-F. Wu, B. P. Keller, P. Fini, J.KPusl, M. Le, N. X. Nguyen, C. Nguyen, D. Widman, S. Keller, S. P. Denbaars,Gand U. K. Mishra, "Short-channel Al_0.5GaN_0.5N/GaNGMODFETs with power density > 3 W/mm at 18 GHz," Electron. Lett.,2vol. 33, no. 20, pp. 1742-1743, 25 September 1997.H

[Wu0997b] Y.-F. Wu, B. P. Keller, S. Keller, N.IX. Nguyen, M. Le, C. Nguyen, T. J. Jenkins, L. T. Kehias, S. P. Denbaars,Mand U. K. Mishra, "Short Channel AlGaN/GaN MODFET's with 50-GHz f_THand 1.7-W/mm Output-Power at 10 GHz," IEEE Electron Device Lett.,,vol. 18, no. 9, pp. 438-440, September 1997.I

[Eastman0897] L. Eastman, K. Chu, W. Schaff,IM. Murphy, N. G. Weimann, T. Eustis, "High Frequency AlGaN/GaN MODFET's,"wMRS Internet J. Nitride Semicond. Res., vol. 2, art. 17, 1997. [Link]H

[Chen0797] Q. Chen, J. W. Yang, M. A. Khan, A.IT. Ping, and I. Adesida, "High transconductance AlGaN/GaN heterostructureIfield effect transistors on SiC substrates," Electron. Lett., vol.(33, no. 16, pp. 1413-1415, 31 July 1997.J

[Gaska0797] R. Gaska, Q. Chen, J. Yang, M. AsifJKhan, M. S. Shur, A. Ping, and I. Adesida, "AlGaN-GaN heterostructure FETsFwith offset gate design," Electron. Lett., vol. 33, no. 14, pp.1255-1257, 3 July 1997.J

[Aktas0697] O. Aktas, Z. F. Fan, A. Botchkarev,IS. N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, "MicrowaveOPerformance of AlGaN/GaN Inverted MODFET's," IEEE Electron Device Lett.,'vol. 18, no. 6, pp. 293-295, June 1997.G

[Wu0697] Y.-F. Wu, S. Keller, P. Kozodoy, B. P.GKeller, P. Parikh, D. Kapolnek, S. P. Denbaars, and U. K. Mishra, "BiasKDependent Microwave Performance of AlGaN/GaN MODFET's Up To 100 V," IEEEBElectron Device Lett., vol. 18, no. 6, pp. 290-292, June 1997.F

[Ping0697] A.T. Ping, M. Asif Khan, Q. Chen,FJ. W. Yang and I. Adesida, "Dependence of DC and RF characteristics onFgate length for high current AlGaN/GaN HFETs," Electron. Lett.,,vol. 33, no. 12, pp. 1081-1083, 5 June 1997.N

[Fan0497] Zhifang Fan, Changzhi Lu, A. E. Botchkarev,HH. Tang, A. Salvador, O. Aktas, W. Kim, and H. Morkoc, "AlGaN/GaN doubleMheterostructure channel modulation doped field effect transistors (MODFETs),"BElectron Lett., vol. 33, no. 9, pp. 814-815, 24 April 1997.H

[Burm0497] Jinwook Burm, Kenneth Chu, William,IJ. Schaff, Lester F. Eastman, M. Asif Khan, Qishang Chen, J. W. Yang, andGMichael S. Shur, "0.12-mm Gate III-V NitrideIHFET's with High Contact Resistances," IEEE Electron Device Lett.,(vol. 18, no. 4, pp. 141-143, April 1997.H

[Chen0397] Q. Chen, R. Gaska, M. Asif Khan, M.GS. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, and L. F. Eastman,J"Microwave performance of 0.25 mm doped channelMGaN/AlGaN heterostructure field effect transistors at elevated temperatures,"CElectron. Lett., vol. 33, no. 7, pp. 637-639, 27 March 1997.G

[Nguyen0297] N. X. Nguyen, B. P. Keller, S.HKeller, Y.-F. Wu, M. Le, C. Nguyen, S. P. Denbaars, U. K. Mishra, and D.LGrider, "GaN/AlGaN MODFET with 80 GHz f_max and > 100 V gate-drainHbreakdown voltage," Electron. Lett., vol. 33, no. 4, pp. 334-335,13 February 1997.H

[Binari0197] S. C. Binari, J. M. Redwing, G.NKelner, and W. Kruppa, "AlGaN/GaN HEMTs grown on SiC substrates," Electron.8Lett., vol. 33, no. 3, pp. 242-243, 30 January 1997.N

[Aktas1296] Ozgur Aktas, Z. F. Fan, S. N. Mohammad,OA. E. Botchkarev, and H. Morkoc, "High temperature characteristics of AlGaN/GaNJmodulation doped field-effect transistors," Appl. Phys. Lett., vol.,69, no. 25, pp. 3872-3874, 16 December 1996.F

[Khan1296] M. Asif Khan, Q. Chen, Michael S.MShur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman,F"CW Operation of Short-Channel GaN/AlGaN Doped Channel HeterostructureGField Effect Transistors at 10 GHz and 15 GHz," IEEE Electron Device7Lett., vol. 17, no. 12, pp. 584-585, December 1996.H

[Wu0996a] Y.-F. Wu, B. P. Keller, S. Keller, D.QKapolnek, S. P. Denbaars, and U. K. Mishra, "Measured Microwave Power PerformanceHof AlGaN/GaN MODFET," IEEE Electron Device Lett., vol. 17, no. 9,pp. 455-457, September 1996.H

[Wu0996b] Y.-F. Wu, B. P. Keller, S. Keller, D.LKapolnek, P. Kozodoy, S. P. Denbaars, and U. K. Mishra, "Very high breakdownGvoltage and large transconductance realized on GaN heterojunction fieldNeffect transistors," Appl. Phys. Lett., vol. 69, no. 10, pp. 1438-1440,2 September 1996.G

[Mohammad0996] S. N. Mohammad, Z.-F. Fan,TA. Salvador, O. Aktas, A. E. Botcharev, W. Kim, and Hadis Morkoc, "PhotoluminescenceGcharacterization of the quantum well structure and influence of opticalHillumination of the electrical performance of AlGaN/GaN modulation-dopedIfield-effect transistors," Appl. Phys. Lett., vol. 69, no. 10, pp.1420-1422, 2 September 1996.H

[Fan0896] Zhifang Fan, S. N. Mohammad, O Aktas,GA. E. Botcharev, A. Salvador, and Hadis Morkoc, "Suppression of leakageOcurrents and their effect on the electrical performance of AlGaN/GaN modulationGdoped field-effect transistors," Appl. Phys. Lett., vol. 69, no.

Gate Length	L_sd	f_T	f_max	I_sd	RF Power	gm_ext	Reference
micron	micron	GHz	GHz	A/mm	W/mm at GHz	mS/mm
0.15		65	80	1.300	1.8 at 4	300	Unpublished
3	5			0.800		140	Kuksenkov0798
0.45		28	114	0.680	6.8 at 10	200	Sheppard0698
0.7	2	15	42	1.100	2.82 at 10	270	Sullivan06981and Sullivan0498
0.4		26	51	0.850			Nguyen0498
1.4	3.6			0.475		220	Kawai0398
0.15		67	140	0.700	1.55 at 3	230	Chu0298
0.25	2	28	40	0.750		120	Nguyen0298
0.25	2	53	58	1.430		229	Ping0298
0.5	2	33	41	1.400		221	Ping0298
1	3	15	24	1.220		205	Ping0298
0.7	2	17.5	44	1.050	2.84 at 8 2.57 at 10	220	Wu0298
0.9	2	15	35	1.000		255	Wu0298
0.25	2		45	1.020	1.71 at 8.4	220	Chen0298
1.5	5			0.950		142	Gaska1097
0.25	1.6	52	82	1.130	3.3 at 18	240	Wu0997a
0.2	1.6	50	92	0.806	1.7 at 10	240	Wu0997b
0.12		46.9	103	0.550		120	Eastman0897
0.25	2-3			1.710		222	Chen0797
0.25	2			1.000		130	Gaska0797
4	6			1.000		130	Gaska0797
2		6	11	0.260	1.5 at 4	105	Aktas0697
0.25	2	37	81	1.000		152	Ping0697
0.5	2	21	53	0.880			Ping0697
0.7	2	14	44	0.850			Ping0697
1.0	3	11	31	0.740		122	Ping0697
1	3	9.6	27.2	0.700	1.57 at 4	160	Wu0697
1.5	3			1.100		270	Fan0497
0.12		46.9	103	0.560		80	Burm0497
0.25	2	37.5	80.4	1.020		220	Chen0397
0.25	2	27	80	0.420		120	Nguyen0297
1	5	6	11	0.200		70	Binari0197
1.5	4			0.275		142	Aktas1296
0.15	2	29.8	97.4	0.600	0.27 at 10	120	Khan1296
1	4	6	15	0.340		120	Wu0996a
1.5	>2.5			0.695		222	Mohammad0996
1.5	3			0.330		130	Wu0996b
1	3			0.310		140	Wu0996b
2	4			0.490		186	Fan0896
1	5			0.350		120	Chen0896
1	5	18.3		0.600		110	Khan0796
0.25	>1	21.4	77.5	0.150		40	Burm0596
0.25	2	36.1	70.8	0.200		90	Khan0296
1	5			0.333		23	Khan0196
3	5			0.300		120	Ozgur0895
0.23	1.75	22	70	0.050		24	Khan0295
0.25	1.75	11	35	0.060		27	Khan0894
4	10			0.500		28	Khan0893