MBE growth conditions

Ga and Si from 16cc thermal effusion furnace

N₂ from LN₂ boiloff passed through two stages of resin and particle filters

Nominally 2.8sccm flow - chamber pressure 1.5x10^-5 T

600W remote RF plasma source - Oxford CARS 25

0.1 µm/hr growth rate

Substrate thermocouple temperature of 840°C corresponds to actual temperature of approximately 690°C

these conditions produce insulating undoped GaN Return to the 4th_workshop pages