Relationship between defect PL and Si doping in GaN grown by MBE using a remote RF plasma

W. Davis, L.F. Eastman, T. Eustis, M. Murphy, W.J. Schaff*, E.L. Sophir, N. Weimann

Cornell University

Ithaca, NY 14853

607-255-3974

*schaff@iiiv.tn.cornell.edu

supported by ONR, NSF and Rome Laboratories
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