Table of ContentsGaN Heterojunction Field Effect Transistors grown by Molecular Beam Epitaxy MBE AlGaN/GaN HFETÕs on Sapphire RF results for MBE GaN HFETs Polarity of Wurtzite GaN Control of GaN Growth Polarity AFM Images of Epitaxial GaN Layers (3 µm x 3 µm) RHEED Patterns for GaN Samples Normal Piezo HFET (Ga-Face) on AlN buffer MBE Growth Conditions Bright field image of AlGaN/GaN HFET interface PPT Slide HRXD Reciprocal Space Map showing the degree of relaxation of the AlGaN barrier Sapphire Surface Degradation Sapphire Surface Degradation (continued) Issues to address for MBE GaN Wafer Production Conclusions Radial Uniformity of GaN Grown on a 2Ó Sapphire Substrate GaN Bandgap vs Temperature by PL Ga Temperature Required to Maintain 0.75µm/hr Growth Rate Inverted Piezo HFET (N-Face) on (1000) sapphire substrate Piezo HFET structure grown by MBE on 6H SiC - Si-face Ga desorption resulting from opening Al shutter as measured by RGA Large Signal Characteristics of 0.4 x 100µm HFET grown by MBE Sapphire Surface Degradation Radial Uniformity of GaN Thickness Pulsed and DC IV for MBE HFET |
Author: Schaff
Email: schaff@iiiv.tn.cornell.edu Home Page: http://www.iiiv.cornell.edu/~schaff/ Other information: |