October 2, 2001
Latest Annual and Quarterly Reports in .html and .pdf formats for ONR MURI
at Cornell on wide bandgap semiconductor power
amplifiers
October 2, 2001
Latest Annual and Quarterly Reports in .html and .pdf formats for ONR MURI
at Cornell on wide bandgap semiconductor power
amplifiers
May 8, 2001 Latest Reports in .html
and .pdf formats for ONR MURI at Cornell on Semiconductor
Interface Electronics
August 19, 1999 GaN HFETs grown by MBE- Viewgraphs from URSI meeting
August 10, 1998 High mobility GaN grown by MBE- Viewgraphs from Nitride Workshop
Physical properties of III-Nitrides
AlGaN/GaN HFET
Experimental Data and References
GaN has been grown by by gas source molecular beam epitaxy (GSMBE) at the Cornell MBE facility since August 1995. Since that time, more than 800 wafers have been grown.
For detailed information on what has been learned during this time, see data and discussion on GaN by MBE at Cornell
Additional information on GaN growth by MBE at Cornell is found in the reports for the ONR MURI program at Cornell.
Also, viewgraphs from a presentation at the 4th wide bandgap workshop at St. Louis during April 1997 are available.
Some of the individuals working in GaN at Cornell.
A paper on GaN modulation doped field effect transistors
(MODFET)s from Cornell
A discussion area
dedicated to GaN exists here. It is available for
exchange of ideas on the growth and properties of GaN, or
feedback
on the content of the GaN pages at Cornell.
click here to post a comment to the discussion area.
MRS Internet Journal of Nitride Semiconductor Research
Physics and Technology of Wide Bandgap Semiconductors
High Temperature Electronics Network
ONR MURI at Cornell on widebandgap
semiconductor power
amplifiers
MURI at NCSU on widebandgap
semiconductor switches
ONR Workshops on Wide Bandgap
Materials and Devices
Seventeenth Biennial IEEE/Cornell University Conference
on high performance devices August 7- 9, 2000
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