Viewgrpahs from the fourth widebandgap workshop

held at St Louis, Mo during March 12-14, 1997

title

Growth Conditions

Photoluminescence as a function of Si doping of GaN

Band diagram showing fermi-level pinning at defects in GaN

X-ray diffraction FWHM of GaN and Sapphire

AFM rms surface roughness as a function of doping concentration

AFM image of GaN Si doped at 3x10¹⁸ cm^-3 (129K)

AFM image of GaN Si doped at 3.8x10²⁰ cm^-3 (148K)

Summary

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