The development of devices made from GaN requires greater control of the materials synthesis than presently exists. A central difficulty is the lack of an ideal substrate for epitaxial growth. Most of the effort reported here has focused on the growth of GaN on sapphire substrates by gas source molecular beam epitaxy (GSMBE). This information is reported in sufficient detail to permit those entering the field to benefit from our experience. Your feedback is encouraged. We would like to incorporate any information that you wish to share into these pages.

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  MBE GaN research at Cornell has been supported by the National Science Foundation through the Materials Science Center at Cornell, Rome Laboratories, the Office of Naval Research, and Eastman Kodak.

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