Kick-off meeting for ONR MURI on Semiconductor Interface Electronics
monitored by Dr. Colin E.C. Wood
UCSD PROGRAM
Peter Asbeck (UCSD)
Program Organization & Tasks
Ed Yu (UCSD)
Physics and Characterization of Polarization in the Nitrides -
James Speck (UCSB)
MBE Materials and Polarization Reseqarch at UCSB
Jerry Bernholc (NCSU)
MOCVD Materials and Polarization Research at NCSU
Eicke Weber (UC Berkeley)
Polarization Measurements in Nitride Materials
Peter Asbeck (UCSD)
Polarization Effects in Heterostructure Devices
CORNELL PROGRAM
Agenda - and list of questions to be answered by this Research
Neil Ashcroft and Erik Alldredge
Theoretical Study of Semiconductor Interface Properties
William Schaff and Hai Lu MBE Growth of Structures with Electrical Polarization
Michael Spencer and Goutam Koley
MOCVD Growth of Structures and Spontaneous Polarization in AlN
John Silcox and K. Andre Mkhoyan
STEM Studies of GaN Semiconductor Interfaces
Chun Lin and Qiang Wu (for Robert Grober)
High Spatial Resolution Spectroscopic Imaging of III-V Nitrides
Oliver Ambacher and Roman Dimitrov
Creation and Characterization of 2DEG and 2DHG in Nitride Heterostructures
Lester Eastman (for Brian Ridley)
Electronic Theory and Carrier Transport in Nitride Heterostructures
Colin E. C. Wood
Discussion